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Fabricante

MC-458CB641PS

8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)

NEC => Renesas Technology 

DATA SHEET

MOS INTEGRATED CIRCUIT

MC-458CB641ES, 458CB641PS

8M-WORD BY 64-BIT

SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)

Description

The MC-458CB641ES and MC-458CB641PS are 8,388,608 words by 64 bits synchronous dynamic RAM module

(Small Outline DIMM) on which 4 pieces of 128M SDRAM: µPD45128163 are assembled.

These modules provide high density and large quantities of memory in a small space without utilizing the surface-

mounting technology on the printed circuit board.

Decoupling capacitors are mounted on power supply line for noise reduction.

Features

• 8,388,608 words by 64 bits organization

• Clock frequency and access time from CLK

Part number

/CAS latency

Clock frequency (MAX.) Access time from CLK (MAX.)

MC-458CB641ES-A80

CL = 3

125 MHz

6 ns

CL = 2

100 MHz

6 ns

MC-458CB641ES-A10

CL = 3

100 MHz

6 ns

CL = 2

77 MHz

7 ns

5 MC-458CB641PS-A80

CL = 3

125 MHz

6 ns

CL = 2

100 MHz

6 ns

5 MC-458CB641PS-A10

CL = 3

100 MHz

6 ns

CL = 2

77 MHz

7 ns

• Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge

• Pulsed interface

• Possible to assert random column address in every cycle

• Quad internal banks controlled by BA0, BA1 (Bank Select)

• Programmable burst-length: 1, 2, 4, 8 and Full Page

• Programmable wrap sequence (Sequential / Interleave)

• Programmable /CAS latency (2, 3)

• Automatic precharge and controlled precharge

• CBR (Auto) refresh and self refresh

• Single 3.3 V ±0.3 V power supply

• LVTTL compatible

• 4,096 refresh cycles/64 ms

• Burst termination by Burst Stop command and Precharge command

• 144-pin small outline dual in-line memory module (Pin pitch = 0.8 mm)

• Unbuffered type

• Serial PD

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. M14015EJ4V0DS00 (4th edition)

The mark • shows major revised points.

Date Published February 2000 NS CP(K)

Printed in Japan

©

1999

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