M48Z2M1YPL Ver la hoja de datos (PDF) - STMicroelectronics

Número de pieza

componentes Descripción

Fabricante

M48Z2M1YPL

16 Mbit (2Mb x 8) ZEROPOWER® SRAM

STMicroelectronics 

M48Z2M1, M48Z2M1Y

Table 5. DC Characteristics

Symbol

Parameter

Test Condition(1)

Min

Max

ILI(2)

Input Leakage Current

0V ≤ VIN ≤ VCC

±4

ILO(2) Output Leakage Current

0V ≤ VOUT ≤ VCC

±4

ICC

Supply Current

E = VIL,

Outputs open

140

ICC1 Supply Current (Standby) TTL

E = VIH

10

ICC2 Supply Current (Standby) CMOS

E ≥ VCC – 0.2V

8

VIL

Input Low Voltage

–0.3

0.8

VIH

Input High Voltage

2.2

VCC + 0.3

VOL Output Low Voltage

IOL = 2.1mA

0.4

VOH Output High Voltage

IOH = –1mA

2.4

Note: 1. Valid for Ambient Operating Temperature: TA = 0 to 70°C; VCC = 4.75 to 5.5V or 4.5 to 5.5V (except where noted).

2. Outputs deselected.

Unit

µA

µA

mA

mA

mA

V

V

V

V

OPERATION MODES

The M48Z2M1/Y has its own Power-fail Detect

Circuit. The control circuitry constantly monitors

the single 5V supply for an out of tolerance condi-

tion. When VCC is out of tolerance, the circuit write

protects the SRAM, providing a high degree of

Table 6. Operating Modes

Mode

VCC

E

G

Deselect

VIH

X

WRITE

4.75 to 5.5V

VIL

X

or

READ

4.5 to 5.5V

VIL

VIL

READ

VIL

VIH

Deselect VSO to VPFD (min)(1)

X

X

Deselect

≤ VSO(1)

X

X

Note: X = VIH or VIL; VSO = Battery Back-up Switchover Voltage.

1. See Table 10, page 12 for details.

data security in the midst of unpredictable system

operations brought on by low VCC. As VCC falls be-

low approximately 3V, the control circuitry con-

nects the batteries which sustain data until valid

power returns.

W

DQ0-DQ7

X

High Z

VIL

DIN

VIH

DOUT

VIH

High Z

X

High Z

Power

Standby

Active

Active

Active

CMOS Standby

X

High Z

Battery Back-up Mode

6/17

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