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MAC997(2000) Ver la hoja de datos (PDF) - ON Semiconductor

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MAC997 Datasheet PDF : 12 Pages
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MAC997 Series
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Maximum Lead Temperature for Soldering Purposes for 10 Seconds
Symbol
Max
RθJC
75
RθJA
200
TL
260
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol
Min
Typ
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(VD = Rated VDRM, VRRM; Gate Open)
ON CHARACTERISTICS
IDRM, IRRM
TJ = 25°C
TJ = +110°C
" v v Peak On–State Voltage
(ITM = .85 A Peak; Pulse Width 2.0 ms, Duty Cycle 2.0%)
VTM
Gate Trigger Current (Continuous dc)
(VD = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+)
MAC997A6,A8
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+)
IGT
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+)
MAC997B6,B8
Latching Current (VD = 12 V, IG = 10 mA)
MT2(+), G(+) All Types
MT2(+), G(–) All Types
MT2(–), G(–) All Types
MT2(–), G(+) All Types
Gate Trigger Voltage (Continuous dc)
(VD = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+) All Types
MT2(+), G(–) All Types
MT2(–), G(–) All Types
MT2(–), G(+) All Types
Gate Non–Trigger Voltage
(VD = 12 V, RL = 100 Ohms, TJ = 110°C)
All Four Quadrants
Holding Current
(VD = 12 Vdc, Initiating Current = 200 mA, Gate Open)
Turn-On Time
(VD = Rated VDRM, ITM = 1.0 A pk, IG = 25 mA)
DYNAMIC CHARACTERISTICS
Rate of Change of Commutating Current
(VD = 400 V, ITM = .84 A, Commutating dv/dt = 1.5 V/µs, Gate Open,
TJ = 110°C, f = 250 Hz, with Snubber)
Critical Rate of Rise of Off–State Voltage
(VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 110°C)
Repetitive Critical Rate of Rise of On–State Current
Pulse Width = 20 µs, IPKmax = 15 A, diG/dt = 1 A/µs, f = 60 Hz
IL
VGT
VGD
IH
tgt
di/dt(c)
dv/dt
di/dt
1.6
10.5
1.5
2.5
.66
.77
.84
.88
0.1
1.5
2.0
1.6
20
60
Unit
°C/W
°C/W
°C
Max
Unit
10
µA
100
µA
1.9
Volts
mA
5.0
5.0
5.0
7.0
3.0
3.0
3.0
5.0
mA
15
20
15
15
Volts
2.0
2.0
2.0
2.5
Volts
10
mA
µs
A/ms
V/µs
10
A/µs
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