M5M5V408BFP-10H Ver la hoja de datos (PDF) - MITSUBISHI ELECTRIC
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M5M5V408BFP-10H Datasheet PDF : 14 Pages
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revision-K1.0e, ' 98.09.07
M5M5V408BFP/TP/RT/KV/KR
MITSUBISHI LSIs
4194304-BIT (524288-WORD BY 8-BIT) CMOS STATIC RAM
AC ELECTRICAL CHARACTERISTICS (Vcc=2.7 ~ 3.6V, unless otherwise noted)
(1) TEST CONDITIONS
Supply voltage
2.7V~3.6V
Input pulse
VIH=2.4V,VIL=0.4V
Input rise time and fall time 5ns
DQ
Reference level
Output loads
VOH=VOL=1.5V
Transition is measured ±500mV from
steady state voltage.(for ten,tdis)
Fig.1,CL=30pF
CL=5pF (for ten,tdis)
1TTL
CL
Including scope and
jig capacitance
Fig.1 Output load
(2) READ CYCLE
Symbol
Parameter
tCR
Read cycle time
ta(A) Address access time
ta(S) Chip select access time
ta(OE) Output enable access time
tdis(S) Output disable time after S high
tdis(OE) Output disable time after OE high
ten(S)
ten(OE)
tV(A)
Output enable time after S low
Output enable time after OE low
Data valid time after address
Limits
M5M5V408B
FP,TP,RT,KV,KR-85
M5M5V408B
FP,TP,RT,KV,KR-10
Min
Max
Min
Max
85
100
85
100
85
100
45
50
30
35
30
35
10
10
5
5
10
10
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
(3) WRITE CYCLE
Symbol
Parameter
tCW
Write cycle time
tw(W) Write pulse width
tsu(A)
Address set up time
tsu(A-WH) Address set up time with respect to W high
tsu(S)
tsu(D)
Chip select set up time
Data set up time
th(D)
Data hold time
trec(W) Write recovery time
tdis(W) Output disable time after W low
tdis(OE) Output disable time after OE high
ten(W) Output enable time after W high
ten(OE) Output enable time after OE low
Limits
M5M5V408B
FP,TP,RT,KV,KR-85
M5M5V408B
FP,TP,RT,KV,KR-10
Min
Max Min
Max
85
100
60
75
0
0
70
85
70
85
35
40
0
0
0
0
30
35
30
35
5
5
5
5
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
MITSUBISHI ELECTRIC
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