IXTV30N60PS Ver la hoja de datos (PDF) - IXYS CORPORATION

Número de pieza

componentes Descripción

Fabricante

IXTV30N60PS

PolarHV™ Power MOSFET

IXYS CORPORATION 

IXTH 30N60P IXTQ 30N60P IXTT 30N60P

IXTV 30N60P IXTV 30N60PS

Fig. 9. Source Curre nt vs .

Source -To-Drain V oltage

90

80

70

60

50

40

30

TJ = 125º C

20

TJ = 25º C

10

0

0.4 0.5 0.6 0.7 0.8 0.9

1

1.1

V S D - V olts

Fig. 10. Gate Charge

10

9

VDS = 300V

8

ID = 15A

7

IG = 10mA

6

5

4

3

2

1

0

0 20 40 60 80 100 120 140 160

Q G - nanoCoulombs

10000

1000

Fig. 11. Capacitance

C is s

Coss

100

f = 1MH z

C rs s

10

0

5 10 15 20 25 30 35 40

V D S - V olts

Fig. 12. Forw ard-Bias

Safe Ope rating Are a

100

R DS(on) Lim it

25µs

10

TJ = 150ºC

TC = 25ºC

1

10

1m s

100µs

10m s

DC

100

V D S - V olts

1000

Fig. 13. Maximum Transient Thermal Resistance

1.00

0.10

0.01

0.1

1

10

100

1000

Pulse Width - milliseconds

IXYS reserves the right to change limits, test conditions, and dimensions.

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