IXTQ30N60P Ver la hoja de datos (PDF) - IXYS CORPORATION
Número de pieza
componentes Descripción
Fabricante
IXTQ30N60P Datasheet PDF : 6 Pages
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Symbol
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
R
thJC
RthCS
IXTH 30N60P IXTQ 30N60P IXTT 30N60P
IXTV 30N60P IXTV 30N60PS
Test Conditions
Characteristic Values
(TJ = 25° C, unless otherwise specified)
Min. Typ. Max.
VDS = 20 V; ID = 0.5 ID25, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
VGS = 10 V, VDS = 0.5 ID25
RG = 4 Ω (External)
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
22 25
S
5050
pF
540
pF
53
pF
29
ns
20
ns
80
ns
25
ns
82
nC
28
nC
30
nC
0.23 ° C/W
0.21
° C/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25° C, unless otherwise specified)
Min. Typ. Max.
IS
VGS = 0 V
ISM
Repetitive
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤300 µs, duty cycle d≤ 2 %
30 A
80 A
1.5 V
trr
IF = 25A, -di/dt = 100 A/µs
QRM
VR = 100V
500
ns
4.0
µC
Fig. 1. Output Characteristics
@ 25ºC
30
27
VGS = 10V
8V
24
7V
21
6.5V
18
15
12
6V
9
5.5V
6
3
5V
0
012345678
VD S - Volts
Fig. 2. Extended Output Characteristics
@ 25ºC
60
55
VGS = 10V
50
8V
7V
45
40
6.5V
35
30
25
20
6V
15
10
5.5V
5
5V
0
0 3 6 9 12 15 18 21 24 27 30
VD S - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844
one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585
6,710,405B2 6,759,692
6,710,463
6,771,478 B2
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