IXGR35N120B Ver la hoja de datos (PDF) - IXYS CORPORATION
Número de pieza
componentes Descripción
Fabricante
IXGR35N120B Datasheet PDF : 2 Pages
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Symbol
gfs
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tri
td(off)
tfi
Eoff
td(on)
t
ri
Eon
t
d(off)
t
fi
Eoff
RthJC
RthCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IC = IC90, VCE = 10 V,
Note1
30 40
S
VCE = 25 V, VGE = 0 V, f = 1 MHz
4620
pF
260
pF
90
pF
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
170
nC
28
nC
57
nC
Inductive load, TJ = 25°C
50
ns
IC =
I,
C90
VGE
=
15
V
27
ns
VCE = 0.8 VCES, RG = Roff = 4.7 Ω
35N120B 180 280 ns
Remarks: Switching times may
35N120C 150 220 ns
increase for VCE (Clamp) > 0.8 VCES, 35N120B 160 320 ns
higher TJ or increased RG
35N120C 115 190 ns
35N120B 3.8 7.3 mJ
35N120C 3.0 4.2 mJ
Inductive load, TJ = 125°C
55
IC = IC90, VGE = 15 V
31
VCE = 0.8 VCES, RG = Roff = 4.7 Ω
2.6
Remarks: Switching times may
35N120B 300
increase for VCE (Clamp) > 0.8 VCES, 35N120C 220
higher TJ or increased RG
35N120B 360
35N120C 260
35N120B 8.0
35N120C 6.2
0.15
ns
ns
mJ
ns
ns
ns
ns
mJ
mJ
0.5 K/W
K/W
Note: 1. Pulse test, tp ≤ 300 ms, duty cycle:d ≤ 2 %
IXGR 35N120B
IXGR 35N120C
ISOPLUS 247 OUTLINE
1 Gate, 2 Drain (Collector)
3 Source (Emitter)
4 no connection
Dim. Millimeter
Min. Max.
A 4.83 5.21
A1 2.29 2.54
A2 1.91 2.16
b 1.14 1.40
b1 1.91 2.13
b2 2.92 3.12
C 0.61 0.80
D 20.80 21.34
E 15.75 16.13
e
5.45 BSC
L 19.81 20.32
L1 3.81 4.32
Q 5.59 6.20
R 4.32 4.83
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 .244
.170 .190
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025
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