IXGH16N170 Ver la hoja de datos (PDF) - IXYS CORPORATION
Número de pieza
componentes Descripción
Fabricante
IXGH16N170 Datasheet PDF : 5 Pages
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IXGH 16N170
IXGT 16N170
Fig. 7. T ransconductance
21
TJ = -40º C
18
25º C
125º C
15
12
9
6
3
0
0
8
16
24
32
40
48
56
I C - A mperes
Fig. 9. Dependence of Eoff on IC
24
TJ = 125º C
22
VG E = 15V
VC E = 1360V
20
18
RG = 50 Ohms
16
RG = 10 Ohms
14
12
10
16 18 20 22 24 26 28 30 32
I C - A mperes
Fig. 8. Dependence of Eoff on RG
24
22
20
18
TJ = 125ºC
VG E = 15V
16 VC E = 1360V
I C = 32A
14
12
I C = 16A
10
8
0
10
20
30
40
50
60
R G - Ohms
Fig. 10. Dependence of Eoff on T emperature
31
RG = 10 Ohms
28 RG = 50 Ohms - - - - -
25
VG E = 15V
VC E = 1360V
22
19
I C = 32A
16
13
I C = 16A
10
7
0
25
50
75
100
125
150
TJ - Degrees Centigrade
Fig. 11. Gate Charge
15
VC E = 600V
12
I C= 16A
I G= 10mA
9
10000
Fig. 12. Capacitance
f = 1M Hz
1000
C ies
6
100
C oes
3
C res
0
0
10 20 30 40 50 60 70 80
Q G - nanoCoulombs
IXYS reserves the right to change limits, test conditions, and dimensions.
10
0
5
10
15
20 25 30 35 40
V CE - V olts
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