IXGH16N170 Ver la hoja de datos (PDF) - IXYS CORPORATION
Número de pieza
componentes Descripción
Fabricante
IXGH16N170 Datasheet PDF : 5 Pages
| |||
Symbol
gfs
IC(ON)
Cies
Coes
C
res
Qg
Qge
Qgc
td(on)
tri
td(off)
tfi
E
off
t
d(on)
t
ri
E
on
td(off)
tfi
E
off
RthJC
RthCS
IXGH 16N170
IXGT 16N170
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
IC = IC90; VCE = 10 V,
10 14
S
Pulse test, t ≤ 300 μs, duty cycle ≤ 2 %
VGE = 10V, VCE = 10V
65
A
VCE = 25 V, VGE = 0 V, f = 1 MHz
1650
pF
75
pF
26
pF
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
78
nC
13
nC
24
nC
Inductive load, TJ = 25°C
IC = IC90, VGE = 15 V
VCE = 0.8 VCES, RG = Roff = 10 Ω
45
ns
48
ns
400 600 ns
770 1100 ns
9.3 14 mJ
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V
VCE = 0.8 VCES, RG = Roff = 10 Ω
48
ns
42
ns
1.5
mJ
430
ns
1170
ns
11.2
mJ
0.65 °C/W
(TO-247)
0.25
°C/W
TO-247 (IXGH) Outline
123
∅P
e
Terminals: 1 - Gate
2 - Drain
3 - Source Tab - Drain
Dim. Millimeter
Inches
Min. Max. Min. Max.
A
4.7 5.3
A1
2.2 2.54
A2
2.2 2.6
b
1.0 1.4
b1 1.65 2.13
b2 2.87 3.12
C
.4
.8
D 20.80 21.46
E 15.75 16.26
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1
4.50
.177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC
242 BSC
TO-268 (IXGT) Outline (D3-Pak)
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
Ref: IXYS CO 0052 RA
6,727,585
7,005,734 B2
6,759,692
6,771,478 B2
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