IXFH18N100Q3 Ver la hoja de datos (PDF) - IXYS CORPORATION

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Fabricante

IXFH18N100Q3

HiperFET™ Power MOSFETs Q3-Class

IXYS CORPORATION 

Symbol

Test Conditions

(TJ = 25°C Unless Otherwise Specified)

gfs

VDS = 20V, ID = 0.5 • ID25, Note 1

Ciss

Coss

Crss

VGS = 0V, VDS = 25V, f = 1MHz

RGi

Gate Input Resistance

td(on)

tr

td(off)

tf

Resistive Switching Times

VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25

RG = 3Ω (External)

Qg(on)

Qgs

Qgd

VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25

RthJC

RthCS

TO-247

Characteristic Values

Min. Typ. Max.

9

16

S

4890

pF

400

pF

34

pF

0.20

Ω

37

ns

32

ns

40

ns

13

ns

90

nC

33

nC

37

nC

0.15 °C/W

0.21

°C/W

Source-Drain Diode

Symbol

Test Conditions

(TJ = 25°C Unless Otherwise Specified)

IS

VGS = 0V

ISM

Repetitive, Pulse Width Limited by TJM

VSD

IF = IS, VGS = 0V, Note 1

trr

IRM

QRM

IF = 9A, -di/dt = 100A/μs

VR = 100V, VGS = 0V

Characteristic Values

Min. Typ. Max.

18 A

72 A

1.4 V

300 ns

11.0

A

1.5

μC

IXFT18N100Q3

IXFH18N100Q3

TO-268 Outline

Terminals: 1 - Gate

2,4 - Drain

3 - Source

TO-247 Outline

123

∅P

e

Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.

ADVANCE TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived

from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a

"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test

conditions, and dimensions without notice.

Terminals: 1 - Gate

2 - Drain

3 - Source

Dim. Millimeter

Min. Max.

A

4.7 5.3

A1

2.2 2.54

A2

2.2 2.6

b

1.0 1.4

b1 1.65 2.13

b2 2.87 3.12

C

.4

.8

D 20.80 21.46

E 15.75 16.26

e 5.20 5.72

L 19.81 20.32

L1

4.50

∅P 3.55 3.65

Q 5.89 6.40

R 4.32 5.49

S 6.15 BSC

Inches

Min. Max.

.185 .209

.087 .102

.059 .098

.040 .055

.065 .084

.113 .123

.016 .031

.819 .845

.610 .640

0.205 0.225

.780 .800

.177

.140 .144

0.232 0.252

.170 .216

242 BSC

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844

by one or more of the following U.S. patents: 4,850,072 5,017,508

4,881,106 5,034,796

5,049,961

5,063,307

5,187,117

5,237,481

5,381,025

5,486,715

6,162,665

6,259,123 B1

6,306,728 B1

6,404,065 B1

6,534,343

6,583,505

6,683,344 6,727,585 7,005,734 B2 7,157,338B2

6,710,405 B2 6,759,692 7,063,975 B2

6,710,463

6,771,478 B2 7,071,537

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