IXFE24N100 Ver la hoja de datos (PDF) - IXYS CORPORATION
Número de pieza
componentes Descripción
Fabricante
IXFE24N100 Datasheet PDF : 2 Pages
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Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
RthJC
RthCK
VDS = 10 V; ID = IT, Note 2
VGS = 0 V, VDS = 25 V, f = 1 MHz
VGS = 10 V, VDS = 0.5 • VDSS, ID = IT
RG = 1 Ω (External),
VGS = 10 V, VDS = 0.5 • VDSS, ID = IT
Characteristic Values
Min. Typ. Max.
15 22
S
7000
pF
750
pF
260
pF
35
ns
35
ns
75
ns
21
ns
250
nC
55
nC
135
nC
0.25 K/W
0.07
K/W
IXFE 23N100
IXFE 24N100
ISOPLUS-227 B
Source-Drain Diode
(TJ = 25°C, unless otherwise specified)
Symbol
Test Conditions
Characteristic Values
Min. Typ. Max.
IS
VGS = 0
24N100
23N100
ISM
Repetitive;
pulse width limited by TJM
24N100
23N100
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
trr
QRM
IF = IS, -di/dt = 100 A/µs, VR = 100 V
IRM
24
A
23
A
96
A
92
A
1.5
V
250 n s
1.0
µC
8
A
Notes:
1. Pulse width limited by TJM.
2. Pulse test, t ≤ 300 ms, duty cycle d ≤ 2%.
3. ITTest current:
24N100: IT = 12 A
23N100: IT = 11.5 A
Please see IXFN24N100 data
sheet for characteristic curves.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025
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