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ISP815(2000) Ver la hoja de datos (PDF) - Isocom

Número de pieza
componentes Descripción
Fabricante
ISP815 Datasheet PDF : 3 Pages
1 2 3
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature
-55°C to + 125°C
Operating Temperature
-55°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current
Reverse Voltage
Power Dissipation
50mA
6V
70mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BV
CEO
Emitter-collector Voltage BVECO
Power Dissipation
35V
6V
150mW
POWER DISSIPATION
Total Power Dissipation
200mW
(derate linearly 2.67mW/°C above 25°C)
ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted )
PARAMETER
MIN TYP MAX UNITS TEST CONDITION
Input
Output
Forward Voltage (V )
F
Reverse Voltage (VR)
6
Reverse Current (IR)
Collector-emitter Breakdown (BVCEO) 35
( Note 2 )
Emitter-collector Breakdown (BV ) 6
ECO
Collector-emitter Dark Current (ICEO)
1.2 1.4 V
V
10 µA
V
V
100 nA
I = 20mA
F
IR = 10µA
VR = 6V
IC = 1mA
I
E
=
100µA
VCE = 20V
Coupled Current Transfer Ratio (CTR) (Note 2) 600
7500 %
1mA IF , 2V VCE
Collector-emitter Saturation VoltageVCE (SAT)
1.0 V
20mA
IF
,
5mA
I
C
Input to Output Isolation Voltage VISO 5300
7500
Input-output Isolation Resistance RISO 5x1010
Output Rise Time tr
60
Output Fall Time tf
53
VRMS
VPK
300 µs
250 µs
See note 1
See note 1
VIO = 500V (note 1)
V = 2V ,
CE
IC = 10mA, RL= 100
Note 1
Note 2
Measured with input leads shorted together and output leads shorted together.
Special Selections are available on request. Please consult the factory.
4/10/00
DB92414-AAS/A3

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