IRLML0030TRPBF Ver la hoja de datos (PDF) - TY Semiconductor
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IRLML0030TRPBF Datasheet PDF : 2 Pages
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Product specification
IRLML0030TRPbF
Electric Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
30 ––– ––– V VGS = 0V, ID = 250μA
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
–––
–––
–––
0.02
33
22
–––
40
27
V/°C
mΩ
Reference to 25°C, ID = 1mA
d VGS = 4.5V, ID = 4.2A
d VGS = 10V, ID = 5.2A
VGS(th)
Gate Threshold Voltage
1.3 1.7 2.3
V VDS = VGS, ID = 25μA
IDSS
Drain-to-Source Leakage Current
––– ––– 1
μA VDS =24V, VGS = 0V
––– ––– 150
VDS = 24V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
––– ––– 100 nA VGS = 20V
Gate-to-Source Reverse Leakage
––– ––– -100
VGS = -20V
RG
Internal Gate Resistance
––– 2.3 ––– Ω
gfs
Forward Transconductance
9.5 ––– ––– S VDS = 10V, ID = 5.2A
Qg
Total Gate Charge
––– 2.6 –––
ID = 5.2A
Qgs
Qgd
td(on)
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
–––
–––
–––
0.8
1.1
5.2
–––
–––
–––
nC
VDS =15V
d VGS = 4.5V
d VDD =15V
tr
td(off)
Rise Time
Turn-Off Delay Time
––– 4.4
–––
ns ID = 1.0A
––– 7.4 –––
RG = 6.8Ω
tf
Fall Time
––– 4.4 –––
VGS = 4.5V
Ciss
Input Capacitance
––– 382 –––
VGS = 0V
Coss
Output Capacitance
––– 84 ––– pF VDS = 15V
Crss
Reverse Transfer Capacitance
––– 39 –––
ƒ = 1.0MHz
Source - Drain Ratings and Characteristics
Symbol
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
à (Body Diode)
VSD
Diode Forward Voltage
––– ––– 1.6
––– ––– 21
––– ––– 1.0
MOSFET symbol
D
A showing the
G
integral reverse
S
d p-n junction diode.
V TJ = 25°C, IS = 1.6A, VGS = 0V
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
––– 11
––– 4.0
17
6.0
d ns TJ = 25°C, VR = 15V, IF=1.6A
nC di/dt = 100A/μs
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