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HYB5116405BJ-70 Ver la hoja de datos (PDF) - Siemens AG

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HYB5116405BJ-70 Datasheet PDF : 28 Pages
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HYB5116(7)405BJ/BT-50/-60/-70
4M x 4-EDO DRAM
Absolute Maximum Ratings
Operating temperature range ............................................................................................0 to 70 °C
Storage temperature range.........................................................................................– 55 to 150 °C
Input/output voltage ................................................................................-0.5 to min (Vcc+0.5,7.0) V
Power supply voltage...................................................................................................-1.0V to 7.0 V
Power dissipation..................................................................................................................... 1.0 W
Data out current (short circuit) ................................................................................................ 50 mA
Note:
Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage of
the device. Exposure to absolute maximum rating conditions for extended periods may affect device
reliability.
DC Characteristics( note : values in brackets for HYB 5117405 BJ/BT)
TA = 0 to 70 °C, VSS = 0 V, VCC = 5 V ± 10 %; tT = 2 ns
Parameter
Symbol Limit Values
min.
max.
Unit Test
Condition
Input high voltage
VIH
Input low voltage
VIL
Output high voltage (IOUT = – 5 mA)
VOH
Output low voltage (IOUT = 4.2 mA)
VOL
Input leakage current
II(L)
(0 V VIH Vcc + 0.3V, all other pins = 0 V)
Output leakage current
IO(L)
(DO is disabled, 0 V VOUT Vcc + 0.3V)
2.4
– 0.5
2.4
– 10
– 10
Vcc+0.5 V 1)
0.8
V 1)
V 1)
0.4
V 1)
10
µA 1)
10
µA 1)
Average VCC supply current:
ICC1
-50 ns version
-60 ns version
-70 ns version
(RAS, CAS, address cycling: tRC = tRC min.)
100(120) mA
90 (110) mA
80 (100) mA
2) 3) 4)
2) 3) 4)
2) 3) 4)
Standby VCC supply current (RAS = CAS = VIH) ICC2
2
mA –
Average VCC supply current, during RAS-only ICC3
refresh cycles:
-50 ns version
-60 ns version
-70 ns version
(RAS cycling, CAS = VIH, tRC = tRC min.)
100(120) mA 2) 4)
90 (110) mA 2) 4)
80 (100) mA 2) 4)
Semiconductor Group
6

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