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HUFA76445S3S

75A, 60V, 0.0075 Ohm, N-Channel, Logic Level UltraFET® Power MOSFET

Fairchild Semiconductor 

Data Sheet

HUFA76445P3, HUFA76445S3S

November 2000

File Number 4987

75A, 60V, 0.0075 Ohm, N-Channel, Logic

Level UltraFET® Power MOSFET

Packaging

JEDEC TO-220AB

JEDEC TO-263AB

SOURCE

DRAIN

GATE

DRAIN

(FLANGE)

DRAIN

(FLANGE)

HUFA76445P3

GATE

SOURCE

HUFA76445S3S

Symbol

D

G

S

Features

• Ultra Low On-Resistance

- rDS(ON) = 0.0065Ω, VGS = 10V

- rDS(ON) = 0.0075Ω, VGS = 5V

• Simulation Models

- Temperature Compensated PSPICE® and SABER™

Electrical Models

- Spice and SABER Thermal Impedance Models

- www.Intersil.com

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• Switching Time vs RGS Curves

Ordering Information

PART NUMBER

PACKAGE

BRAND

HUFA76445P3

TO-220AB

76445P

HUFA76445S3S

TO-263AB

76445S

NOTE: When ordering, use the entire part number. Add the suffix T

to obtain the variant in tape and reel, e.g., HUFA76445S3ST.

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified

HUFA76445P3, HUFA76445S3S

UNITS

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDSS

60

V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR

60

V

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS

±16

V

Drain Current

Continuous (TC = 25oC, VGS = 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID

75

A

Continuous

Continuous

Continuous

(T C

(T C

(T C

=

=

=

21150000oCooCC, V,, VVGGGSSS===1054VV.5))V()F.(i.gF.uig.rue.r.2e.)2. )..

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ID

ID

ID

75

75

75

A

A

A

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM

Figure 4

Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS

Figures 6, 17, 18

Power Dissipation . . .

Derate Above 25oC

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PD

..

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

Package Body for 10s, See Techbrief TB334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg

NOTES:

1. TJ = 25oC to 150oC.

310

2.08

-55 to 175

300

260

W

W/oC

oC

oC

oC

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy

of the requirements, see AEC Q101 at: http://www.aecouncil.com/

Reliability data can be found at: http://www.mtp.intersil.com/automotive.html.

All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.

©2001 Fairchild Semiconductor Corporation

HUFA76445P3, HUFA76445S3S Rev. A

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