H27UAG8T2B Ver la hoja de datos (PDF) - Hynix Semiconductor

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componentes Descripción

Fabricante

H27UAG8T2B

16Gbit (2048 M x 8 bit) NAND Flash Memory

Hynix Semiconductor 

■ Multilevel Cell technology

■ Supply Voltage

- 3.3V device : Vcc = 2.7 V ~ 3.6 V

Vcc = 2.7 V ~ 3.6 V

■ Organization

- Page size : 8,640 Bytes(8,192+448 bytes)

- Block size : 256 pages(2M+112K bytes)

- Plane size : 512 blocks

■ Page Read Time

- Random Access: 200 ㎲ (Max.)

- Sequential Access : 25 ㎱ (Min.)

■ Write Time

- Page program : 1600 ㎲ (Typ.)

- Block erase : 2.5 ㎳ (Typ.)

■ Operating Current

- Read

- Program

- Erase

- Standby

■ Hardware Data Protection

- Program/Erase locked during power transitions

Release

H27UAG8T2B Series

16Gb (2048M x 8bit) NAND Flash

■ Endurance

- 3,000 P/E cycles (with 24 bit/ 1,024byte ECC)

■ Data Retention

- 10 Years

■ Package

- TSOP (12x20), 48Pin

- Wafer (Bare Die)

■ Unique ID for copyright protection

1. SUMMARY DESCRIPTION

Rev 1.0 / Aug. 2010

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