H1815 Ver la hoja de datos (PDF) - Shantou Huashan Electronic Devices
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H1815 Datasheet PDF : 1 Pages
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Shantou Huashan Electronic Devices Co.,Ltd.
NPN SILICON TRANSISTOR
H1815
█ AUDIO FREQUENCY AMPLIFIER
HIGH FREQUENCY OSC
█ ABSOLUTE MAXIMUM RATINGS（Ta=25℃）
TO-92
Tstg——Storage Temperature………………………… -55~150℃
Tj——Junction Temperature…………………………………150℃
PC——Collector Dissipation…………………………………400mW
VCBO——Collector-Base Voltage………………………………60V
VCEO——Collector-Emitter Voltage……………………………50V
VEBO——Emitter-Base Voltage………………………………5V
IC——Collector Current……………………………………150mA
█ ELECTRICAL CHARACTERISTICS（Ta=25℃）
1―Emitter，E
2―Collector，C
3―Base，B
Symbol
ICBO
IEBO
HFE(1)
HFE(2)
VCE(sat)
VBE(sat)
BVCBO
BVCEO
BVEBO
fT
Characteristics
Min Typ Max Unit
Test Conditions
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
70
25
Collector- Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector-Base Breakdown Voltage
60
Collector-Emitter Breakdown Voltage
50
Emitter-Base Breakdown Voltage
5
Current Gain-Bandwidth Product
80
100 nA
VCB=60V, IE=0
100 nA
VEB=5V, IC=0
700
VCE=6V, IC=2mA
VCE=6V, IC=150mA
250 mV IC=100mA, IB=10mA
1.0 V IC=100mA, IB=10mA
V IC=100μA, IE=0
V IC=1mA, IB=0
V
IE=100μA，IC=0
MHz VCE=10V, IC=1mA
█ hFE Classification
O
70—140
Y
120—240
GR
200—400
BL
350—700
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