GT100NA120UX(2010) Ver la hoja de datos (PDF) - Vishay Semiconductors

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Fabricante

GT100NA120UX
(Rev.:2010)

"High Side Chopper" IGBT SOT-227 (Trench IGBT), 100 A

Vishay Semiconductors 

GT100NA120UX

"High Side Chopper" IGBT SOT-227 Vishay Semiconductors

(Trench IGBT), 100 A

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

Maximum junction and storage temperature

range

TJ, TStg

Thermal resistance, junction to case

IGBT

Diode

RthJC

Thermal resistance, case to sink per module

Mounting torque, 6-32 or M3 screw

RthCS

Weight

MIN.

- 40

-

-

-

-

-

TYP.

-

-

-

0.05

-

30

MAX.

150

0.27

0.37

-

1.3

-

UNITS

°C

°C/W

Nm

g

160

140

120

100

80

60

40

20

0

0 20 40 60 80 100 120 140 160

IC - Continuous Collector Current (A)

Fig. 1 - Maximum DC IGBT Collector Current vs.

Case Temperature

1000

100

10

1

0.1

0.01

1

10

100

1000

10 000

VCE (V)

Fig. 2 - IGBT Reverse Bias SOA

TJ = 150 °C, VGE = 15 V

300

250

TJ = 25 °C

200

TJ = 125 °C

150

100

50

0

0

1

2

3

4

5

6

VCE (V)

Fig. 3 - Typical IGBT Collector Current Characteristics

0.1

TJ = 125 °C

0.01

0.001

TJ = 25 °C

0.0001

100 300 500 700 900 1100

VCES (V)

Fig. 4 - Typical IGBT Zero Gate Voltage Collector Current

Document Number: 93100 For technical questions within your region, please contact one of the following:

Revision: 22-Jul-10

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

www.vishay.com

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