GT100NA120UX(2010) Ver la hoja de datos (PDF) - Vishay Semiconductors
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GT100NA120UX Datasheet PDF : 10 Pages
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GT100NA120UX
Vishay Semiconductors "High Side Chopper" IGBT SOT-227
(Trench IGBT), 100 A
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter breakdown
voltage
VBR(CES) VGE = 0 V, IC = 1 mA
VGE = 15 V, IC = 50 A
Collector to emitter voltage
VCE(on)
VGE = 15 V, IC = 100 A
VGE = 15 V, IC = 50 A, TJ = 125 °C
VGE = 15 V, IC = 100 A, TJ = 125 °C
Gate threshold voltage
Temperature coefficient of
threshold voltage
VGE(th)
VCE = VGE, IC = 500 μA
VGE(th)/TJ VCE = VGE, IC = 1 mA (25 °C to 125 °C)
Collector to emitter leakage current
ICES
VGE = 0 V, VCE = 1200 V
VGE = 0 V, VCE = 1200 V, TJ = 125 °C
Diode reverse breakdown voltage
VBR
IR = 1 mA
IC = 50 A, VGE = 0 V
Diode forward voltage drop
VFM
IC = 100 A, VGE = 0 V
IC = 50 A, VGE = 0 V, TJ = 125 °C
IC = 100 A, VGE = 0 V, TJ = 125 °C
Diode reverse leakage current
IRM
VR = VR rated
TJ = 125 °C, VR = VR rated
Gate to emitter leakage current
IGES
VGE = ± 20 V
MIN.
1200
-
-
-
-
5
-
-
-
1200
-
-
-
-
-
-
-
TYP.
-
1.79
2.36
2.05
2.8
5.8
- 15.6
0.5
0.052
-
2.53
3.32
2.66
3.7
4
0.6
-
MAX.
-
2.33
2.85
2.62
3.42
7
-
100
2
-
3.55
4.35
3.70
4.50
50
3
± 200
UNITS
V
mV/°C
μA
mA
V
V
μA
mA
nA
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Total gate charge (turn-on)
Gate to emitter charge (turn-on)
Gate to collector charge (turn-on)
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Reverse bias safe operating area
Short circuit safe operating area
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
Qg
Qge
Qgc
Eon
Eoff
Etot
Eon
Eoff
Etot
td(on)
tr
td(off)
tf
RBSOA
SCSOA
trr
Irr
Qrr
trr
Irr
Qrr
IC = 100 A, VCC = 600 V, VGE = 15 V
IC = 100 A, VCC = 600 V,
VGE = 15 V, Rg = 5
L = 500 μH
IC = 100 A, VCC = 600 V,
VGE = 15 V, Rg = 5
L = 500 μH, TJ = 125 °C
Energy losses
include tail and
diode recovery
(see fig. 18)
TJ = 150 °C, IC = 270 A, Rg = 22
VGE = 15 V to 0 V, VCC = 900 V,
VP = 1200 V
TJ = 150 °C, Rg = 22
VGE = 15 V to 0 V, VCC = 900 V,
VP = 1200 V
IF = 50 A, dIF/dt = 200 A/μs, VR = 200 V
IF = 50 A, dIF/dt = 200 A/μs,
VR = 200 V, TJ = 125 °C
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
400
120
170
21.9
5.48
27.38
23.6
7.65
31.25
195
259
188
212
MAX.
-
-
-
-
-
-
-
-
-
-
-
-
-
Fullsquare
10
-
129
161
-
11
14
-
700
1046
-
208
257
-
17
21
-
1768
2698
UNITS
nC
mJ
ns
μs
ns
A
nC
ns
A
nC
www.vishay.com
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For technical questions within your region, please contact one of the following: Document Number: 93100
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 22-Jul-10
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