GBPC2508W Ver la hoja de datos (PDF) - Nell Semiconductor Co., Ltd
Número de pieza
componentes Descripción
Fabricante
GBPC2508W Datasheet PDF : 4 Pages
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SEMICONDUCTOR
PRIMARY CHARACTERRISTICS
IF(AV)
25A
VRRM
600V to 1200V
IFSM
IR
300A
5 µA
VF
1.1V
TJ max.
150ºC
GBPC25 RRooHHSS
Nell High Power Products
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified output current (Fig.1)
Peak forward surge current single sine-wave superimposed on
rated load
SYMBOL
VRRM
VRMS
VDC
IF(AV)
06
600
420
600
IFSM
Rating (non-repetitive, for t greater than 1 ms and less than 8.3 ms)
for fusing
RMS isolation voltage from case to leads
Operating junction storage temperature range
I2t
VISO
TJ,TSTG
GBPC25
08
10
800
1000
560
700
800
1000
25
300
12
1200
840
1200
UNIT
V
V
V
A
A
375
A2s
2500
V
-55 to 150
ºC
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
PARAMETER
TEST
SYMBOL
CONDITIONS
06
Maximum instantaneous forward drop per diode
IF = 12.5A
VF
Maximum reverse DC current at rated DC blocking
TA = 25°C
IR
voltage per diode
TA = 150°C
Typical junction capacitance per diode
4V, 1MHz
CJ
GBPC25
08
10
1.1
5
500
300
UNIT
12
V
µA
pF
THERMAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
06
Typical thermal resistance
RθJC(1)
GBPC25
08
10
1.9
UNIT
12
°C/W
Notes
(1) With heatsink
(2) Bolt down on heatsink with silicone thermal compound between bridge and mounting surface for maximum heat transfer with
M5 screw
www.nellsemi.com
Page 2 of 4
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