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GB50NA120UX

"High Side Chopper" IGBT SOT-227 (Ultrafast IGBT), 50 A

Vishay Semiconductors 

GB50NA120UX

"High Side Chopper" IGBT SOT-227 Vishay Semiconductors

(Ultrafast IGBT), 50 A

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

Maximum junction and

storage temperature range

TJ, TStg

Thermal resistance, junction to case

IGBT

Diode

RthJC

Thermal resistance, case to sink per module

RthCS

Mounting torque, 6-32 or M3 screw

Weight

MIN.

- 40

-

-

-

-

-

TYP.

-

-

-

0.05

-

30

MAX.

150

0.29

0.45

-

1.3

-

UNITS

°C

°C/W

Nm

g

160

140

120

100

80

60

40

20

0

0 10 20 30 40 50 60 70 80 90

IC - Continuous Collector Current (A)

Fig. 1 - Maximum DC IGBT Collector Current vs.

Case Temperature

1000

100

10

1

0.1

0.01

1

10

100

1000

10 000

VCE (V)

Fig. 2 - IGBT Reverse Bias SOA

TJ = 150 °C, VGE = 15 V

200

175

150

125

TJ = 25 °C

100

75

TJ = 125 °C

50

25

0

012345678

VCE (V)

Fig. 3 - Typical IGBT Collector Current Characteristics

10

1

TJ = 125 °C

0.1

0.01

0.001

TJ = 25 °C

0.0001

100 300 500 700 900 1100

VCES (V)

Fig. 4 - Typical IGBT Zero Gate Voltage Collector Current

Document Number: 93101 For technical questions within your region, please contact one of the following:

Revision: 22-Jul-10

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

www.vishay.com

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