DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

G911TD5U Ver la hoja de datos (PDF) - Global Mixed-mode Technology Inc

Número de pieza
componentes Descripción
Fabricante
G911TD5U
GMT
Global Mixed-mode Technology Inc GMT
G911TD5U Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
Global Mixed-mode Technology Inc.
G910/G911
Absolute Maximum Ratings
(Note 1)
Input Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V
Power Dissipation Internally Limited
(Note2)
Maximum Junction Temperature . . . . . . . . . . . . .150°C
Storage Temperature Range. . . . . -65°C TJ +150°C
Reflow Temperature (soldering, 10sec) . . . . . . .260°C
Thermal Resistance Junction to Ambient, (θJA)
SOT-89. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 173°C/W(1)
SOT-223. . . . . . . . . . . . . . . . . . . . . . . . . . . . 148°C/W(1)
µTO-92, TO-92 . . . . . . . . . . . . . . . . . . . . . . .159°C/W(1)
Thermal Resistance Junction to Case, (θJc)
SOT-89. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..25°C/W
SOT-223 . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . 22°C/W
Operating Conditions
(Note 1)
Input Voltage. . . . . . . . . . . . . . . . . . . . . . . . . 4V ~ 6.5V
Temperature Range . . . . . . . . . . . . .-40°C TA 85°C
Note (1): See Recommended Minimum Footprint.
Electrical Characteristics
VIN =5V, IO = 600mA/250mA+, CIN=10µF, COUT =10µF. All specifications apply for TA = TJ = 25°C.[Note 3]
PARAMETER
CONDITION
MIN TYP MAX UNIT
Output Voltage
10mA < IO <600mA
10mA < IO <250mA+
3.234 3.3 3.366 V
Line Regulation
Load Regulation
Quiescent Current
Ripple Rejection
Dropout Voltage
Output Current
Short Circuit Current
4V < VIN < 6V, IO = 10mA
10mA < IO < 600mA
10mA < IO < 250mA+
VIN = 5V
fi = 120 Hz, 1VP-P, Io = 100mA
IO = 600mA
IO = 250mA+
Continuous
TA = 25°C,
VOUT within
Test
TJ < 125°C,
±2% (Note 2)
VIN = 4.5V, mounted on SOT-89 recom-
mended minimum footprint
VIN = 5.2V, µTO-92 & TO-92 package
0.53 inch leads soldered to PC Board
---
15
---
mV
---
20
---
mV
---
10
---
---
0.3
---
mA
---
47
---
dB
--- 0.65 ---
V
--- 0.25 ---
---
600
---
---
250+
---
mA
--- 0.65 ---
A
Current Limit
Over Temperature
0.8
A
---
145
---
°C
[+ for µTO-92 & TO-92 Package]
Note 1:
Note2:
Note3:
Note4:
Absolute Maximum Ratings are limits beyond which damage to the device may occur. Operating Conditions are condi-
tions under which the device functions but the specifications might not be guaranteed. For guaranteed specifications and
test conditions see the Electrical Characteristics.
The maximum power dissipation is a function of the maximum junction temperature, TJmax ; total thermal resistance, θJA,
and ambient temperature TA. The maximum allowable power dissipation at any ambient temperature is Tjmax-TA / θJA. If this
dissipation is exceeded, the die temperature will rise above 150°C and IC will go into thermal shutdown. For the G910 in
µTO-92, TO-92, θJA is 159°C/W ;in the SOT-223 package is 148°C/W and SOT-89 package is 173°C/W (See Recom-
mended Minimum Footprint). The safe operation in TO-92 & µTO-92 package, it can see Typical Performance Charac-
teristics(Safe Operating Area).
Low duty pulse techniques are used during test to maintain junction temperature as close to ambient as possible.
The type of output capacitor should be tantalum or aluminum.
Definitions
Dropout Voltage
The input/output Voltage differential at which the regu-
lator output no longer maintains regulation against
further reductions in input voltage. Measured when the
output drops 100mV below its nominal value, dropout
voltage is affected by junction temperature, load cur-
rent and minimum input supply requirements.
Line Regulation
The change in output voltage for a change in input volt-
age. The measurement is made under conditions of low
dissipation or by using pulse techniques such that av-
erage chip temperature is not significantly affected.
Load Regulation
The change in output voltage for a change in load
current at constant chip temperature. The measure-
ment is made under conditions of low dissipation or by
using pulse techniques such that average chip tem-
perature is not significantly affected.
Maximum Power Dissipation
The maximum total device dissipation for which the
regulator will operate within specifications.
Quiescent Bias Current
Current which is used to operate the regulator chip
and is not delivered to the load.
Ver: 7.2
Jan 20, 2006
TEL: 886-3-5788833
http://www.gmt.com.tw
2

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]