FQD30N06TM(2013) Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
componentes Descripción
Fabricante
FQD30N06TM Datasheet PDF : 8 Pages
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1.2
1.1
1.0
0.9
※Notes :
1.
2.
VIDG=S =2500Vμ A
0.8
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 7. Breakdown Voltage Variation
vs. Temperature
103
Operation in This Area
is Limited by RDS(on)
102
100 ïs
1 ms
101
10 ms
DC
100
※ Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
10-1
10-1
100
101
102
VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
2.5
2.0
1.5
1.0
0.5
※ Notes :
1.
2.
IVDG=S
= 10
11.4
V
A
0.0
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 8. On-Resistance Variation
vs. Temperature
25
20
15
10
5
0
25
50
75
100
125
150
TC, Case Temperature [℃]
Figure 10. Maximum Drain Current
vs. Case Temperature
100
1 0 -1
D =0 .5
0 .2
0 .1
0 .0 5
0 .0 2
0 .0 1
sing le p ulse
※ Notes :
1.
2.
Z
D
θu
J
t
C(
y
t)
F
=
ac
2.
to
8
r
5
,
℃
D=
/
t
W
1/t
M
2
a
x
.
3.
TJM
- TC
=
PDM
*
Z
θ
J C( t )
PDM
t1
t2
1 0 -2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
101
t1 , R e c t a n g u l a r P u l s e D u r a t i o n [ s e c ]
Figure 11. Transient Thermal Response Curve
©2001 Fairchild Semiconductor Corporation
4
FQD30N06 Rev. C1
www.fairchildsemi.com
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