FDD6N50TF(2006) Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
componentes Descripción
Fabricante
FDD6N50TF Datasheet PDF : 9 Pages
| |||
Typical Performance Characteristics
Figure 1. On-Region Characteristics
20
Top :
VGS
10.0 V
8.0V
7.5 V
15
7.0 V
6.5 V
6.0 V
5.5 V
Bottom : 5.0 V
10
5
∝ Notes :
1. 250レs Pulse Test
2. TC = 25∩
0
0
10
20
30
40
50
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
2.5
2.0
1.5
1.0
0.5
0.0
0
VGS = 10V
VGS = 20V
∝ Note : TJ = 25∩
5
10
15
20
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
1000
100
10
100
Ciss
Coss
Crss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
C =C
rss
gd
∝ Notes :
1. VGS = 0 V
2. f = 1 MHz
101
VDS, Drain-Source Voltage [V]
Figure 2. Transfer Characteristics
101
100
10-1
10-2
2
150∩
25∩
-55∩
∝ Note
1. VDS = 40V
2. 250レs Pulse Test
4
6
8
10
VGS , Gate-Source Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
101
100
10-1
0.2
150∩ 25∩
∝ Notes :
1. VGS = 0V
2. 250レs Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
VSD , Source-Drain Voltage [V]
Figure 6. Gate Charge Characteristics
12
VDS = 100V
10
VDS = 250V
VDS = 400V
8
6
4
2
∝ Note : ID = 6A
0
0
5
10
15
QG, Total Gate Charge [nC]
3
FDD6N50/FDU6N50 REV. A
www.fairchildsemi.com
Share Link: 