FDB2532 Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
componentes Descripción
Fabricante
FDB2532 Datasheet PDF : 11 Pages
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Typical Characteristics TA = 25°C unless otherwise noted
1.2
ID = 250µA
10000
1.1
COSS ≅ CDS + CGD
1000
CRSS = CGD
1.0
CISS = CGS + CGD
0.9
-80
-40
0
40
80 120 160 200
TJ, JUNCTION TEMPERATURE (oC)
Figure 11. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
100
VGS = 0V, f = 1MHz
50
0.1
1
10
150
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 12. Capacitance vs Drain to Source
Voltage
10
VDD = 75V
8
6
4
2
0
0
WAVEFORMS IN
DESCENDING ORDER:
ID = 33A
ID = 16A
20
40
60
80
100
Qg, GATE CHARGE (nC)
Figure 13. Gate Charge Waveforms for Constant Gate Currents
©2002 Fairchild Semiconductor Corporation
FDB2532 / FDP2532 / FDI2532 Rev. A1
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