EFA025AL Ver la hoja de datos (PDF) - Excelics Semiconductor, Inc.

Número de pieza

componentes Descripción

Fabricante

EFA025AL

High Gain GaAs Power FET

Excelics Semiconductor, Inc. 

Excelics

EFA025AL

DATA SHEET

High Gain GaAs Power FET

• +20.0dBm TYPICAL OUTPUT POWER

• 11.5dB TYPICAL POWER GAIN AT 12GHz

• 0.3 X 250 MICRON RECESSED “MUSHROOM” GATE

• Si3N4 PASSIVATION

• ADVANCED EPITAXIAL DOPING PROFILE

PROVIDES HIGH POWER EFFICIENCY,

LINEARITY AND RELIABILITY

• Idss SORTED IN 5mA PER BIN RANGE

ELECTRICAL CHARACTERISTICS (Ta = 25 OC)

SYMBOLS

PARAMETERS/TEST CONDITIONS

P1dB

G1dB

PAE

Output Power at 1dB Compression

f=12GHz

Vds=8V, Ids=50% Idss

f=18GHz

Gain at 1dB Compression

f=12GHz

Vds=8V, Ids=50% Idss

f=18GHz

Power Added efficiency at 1dB Compression

Vds=8V, Ids=50% Idss

f=12GHz

Idss

Saturated Drain Current Vds=3V, Vgs=0V

420

50 104

D

40

SG

D

GS

48

260

90

59 50 78

Chip Thickness: 75 ± 13 microns

All Dimensions In Microns

MIN

17.0

9.5

20

TYP

20.0

20.0

11.5

9.0

38

45

MAX UNIT

dBm

dB

%

65 mA

Gm

Transconductance

Vds=3V, Vgs=0V

30 50

mS

Vp

Pinch-off Voltage

Vds=3V, Ids=1.0mA

-1.5 -2.5 V

BVgd

Drain Breakdown Voltage Igd=1.0mA

-12 -15

V

BVgs

Rth

Source Breakdown Voltage Igs=1.0mA

Thermal Resistance (Au-Sn Eutectic Attach)

-7 -14

155

V

oC/W

MAXIMUM RATINGS AT 25OC

SYMBOLS PARAMETERS

ABSOLUTE1 CONTINUOUS2

Vds

Drain-Source Voltage

12V

8V

Vgs

Gate-Source Voltage

-8V

-4V

Ids

Drain Current

Idss

Idss

Igsf

Forward Gate Current

6mA

1mA

Pin

Input Power

19dBm

Tch

Channel Temperature

175oC

Tstg

Storage Temperature

-65/175oC

@ 3dB Compression

150oC

-65/150oC

Pt

Total Power Dissipation

880mW

730mW

Note: 1. Exceeding any of the above ratings may result in permanent damage.

2. Exceeding any of the above ratings may reduce MTTF below design goals.

Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054

Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com

Share Link: