DTB114E
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA = 25℃, unless otherwise specified)
PARAMETER
SYMBOL
RATING
UNIT
Supply Voltage
VCC
-50
V
Input Voltage
Output Current
VIN
-40~+10
V
IOUT
-500
mA
Power Dissipation
PD
200
mW
Junction Temperature
Storage Temperature
TJ
TSTG
150
°C
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA= 25℃, unless otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
Input Voltage
VIN(OFF) VCC= -5V, IOUT= -100μA
VIN(ON) VOUT= -0.3V, IOUT= -10mA
Output Voltage
VOUT(ON) IOUT/IIN= -50mA/-2.5 mA
Input Current
IIN
VIN= -5V
Output Current
IOUT(OFF) VCC= -50V , VIN=0V
DC Current Gain
hFE
VOUT= -5V, IOUT= -50mA
Input Resistance
R1
Resistance Ratio
R2/R1
Transition Frequency
fT
VCE= -10 V, IE=5mA, f=100MHz(Note)
Note: Transition frequency of the device
MIN TYP MAX UNIT
-0.5
V
-3
-0.1 -0.3
V
-0.88 mA
-0.5 μA
56
7
10
13
kΩ
0.8
1
1.2
200
MHz
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R206-042,D