DTB114E(2011) Ver la hoja de datos (PDF) - Unisonic Technologies

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DTB114E
(Rev.:2011)

DIGITAL TRANSISTORS (BUILT-IN BIAS RESISTORS)

Unisonic Technologies 

DTB114E

PNP SILICON TRANSISTOR

„ ABSOLUTE MAXIMUM RATINGS (TA = 25℃, unless otherwise specified)

PARAMETER

SYMBOL

RATING

UNIT

Supply Voltage

VCC

-50

V

Input Voltage

Output Current

VIN

-40~+10

V

IOUT

-500

mA

Power Dissipation

PD

200

mW

Junction Temperature

Storage Temperature

TJ

TSTG

150

°C

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

„ ELECTRICAL CHARACTERISTICS (TA= 25℃, unless otherwise specified.)

PARAMETER

SYMBOL

TEST CONDITIONS

Input Voltage

VIN(OFF) VCC= -5V, IOUT= -100μA

VIN(ON) VOUT= -0.3V, IOUT= -10mA

Output Voltage

VOUT(ON) IOUT/IIN= -50mA/-2.5 mA

Input Current

IIN

VIN= -5V

Output Current

IOUT(OFF) VCC= -50V , VIN=0V

DC Current Gain

hFE

VOUT= -5V, IOUT= -50mA

Input Resistance

R1

Resistance Ratio

R2/R1

Transition Frequency

fT

VCE= -10 V, IE=5mA, f=100MHz(Note)

Note: Transition frequency of the device

MIN TYP MAX UNIT

-0.5

V

-3

-0.1 -0.3

V

-0.88 mA

-0.5 μA

56

7

10

13

kΩ

0.8

1

1.2

200

MHz

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

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QW-R206-042,D

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