DTA114E Ver la hoja de datos (PDF) - Unisonic Technologies

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DTA114E

PNP DIGITAL TRANSISTOR (BUILT- IN BIAS RESISTORS)

Unisonic Technologies 

DTA114E

PNP SILICON TRANSISTOR

 ABSOLUATE MAXIUM RATINGS (TA= 25℃, unless otherwise specified.)

PARAMETER

SYMBOL

RATINGS

UNIT

Supply Voltage

Input Voltage

VCC

-50

V

VIN

-40 ~ +10

V

Output Current

SOT-523

IOUT(MAX)

-100

mA

150

mW

Power Dissipation

SOT-23/SOT-323

TO-92

PD

200

mW

625

mW

TO-92SP

550

mW

Junction Temperature

TJ

150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

 ELECTRICAL CHARACTERISTICS (TA= 25℃, unless otherwise specified.)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Input Voltage

VIN(OFF) VCC= -5V, IOUT= -100μA

VIN(ON) VOUT= -0.3V, IOUT= -10mA

-3

Output Voltage

VOUT(ON) IOUT/IIN= -10mA/-0.5mA

Input Current

IIN

VIN= -5V

Output Current

IOUT(OFF) VCC= -50V , VIN=0V

-0.5

V

-0.3

V

-0.88 mA

-0.5

µA

ON CHARACTERISTICS

DC Current Gain

hFE

VOUT= -5V, IOUT= -5mA

30

SMALL SIGNAL CHARACTERISTICS

Input Resistance

R1

7

10

13

kΩ

Resistance Ratio

R2/R1

0.8

1

1.2

Transition Frequency

fT

VCE= -10 V, IE=5mA, f=100MHz

250

MHz

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

2 of 3

QW-R206-046.F

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