DCR5980Z12 Ver la hoja de datos (PDF) - Dynex Semiconductor
Número de pieza
componentes Descripción
Fabricante
DCR5980Z12 Datasheet PDF : 9 Pages
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DCR5980Z
1200
1100
1000
900
800
700
600
500
400
300
200
100
0
0 1 2 3 4 5 6 7 8 9 10 11
Rate of decay of on-state current, di/dt - (A/µs)
Fig.4 Recovered charge
100 Table gives pulse power PGM in Watts
Pulse Width Frequency Hz
µs
50 100 400
100
150 150 150
200
150 150 125
500
150 150 100
1ms
150 100 25
10ms
10
20 - -
100W
50W
20W
10W
VFGM
1
Upper
Limit
99%
Tj
=
25˚C
VGD
Lower Limit 1%
0.1
0.001
IGD
0.01
0.1
1.0
Gate trigger current, IGT - (A)
IFGM
10
Fig.5 Gate characteristics
0.1
50
50
ITSM
I2t
40
40
Anode side cooled
0.01
30
30
Double side cooled
0.001
0.0001
0.001
0.01
Conduction
d.c.
Halfwave
3 phase 120˚
6 phase 60˚
Effective thermal resistance
Junction to case ˚C/W
Double side
0.0065
0.0072
0.0073
0.0076
Anode side
0.0130
0.0137
0.0138
0.0141
0.1
1
10
100
Time - (s)
Fig.6 Maximum (limit) transient thermal impedance -
junction to case (˚C/W)
20
20
10
10
I2t = Î2 x t
2
0
0
1 2 3 4 5 6 7 8 9 10
Pulse width - (ms)
Fig.7 Sub-cycle surge current
6/9
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