DCR1595SW37 Ver la hoja de datos (PDF) - Dynex Semiconductor
Número de pieza
componentes Descripción
Fabricante
DCR1595SW37 Datasheet PDF : 10 Pages
| |||
DCR1595SW
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
Parameter
VGT
IGT
VGD
V
FGM
VFGN
VRGM
I
FGM
PGM
PG(AV)
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Peak forward gate voltage
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Peak gate power
Mean gate power
Test Conditions
VDRM = 5V, Tcase = 25oC
V = 5V, T = 25oC
DRM
case
At VDRM Tcase = 125oC
Anode positive with respect to cathode
Anode negative with respect to cathode
-
Anode positive with respect to cathode
See table fig. 8 and 9
-
Max.
4
400
0.25
30
0.25
5
30
150
10
Units
V
mA
V
V
V
V
A
W
W
CURVES
10000
9000
Tj = 125˚C
8000
7000
6000
5000
4000
3000
2000
1000
0
0.5
1
1.5
2
2.5
Instantaneous on-state voltage, VT - (V)
Fig.2 Maximum (limit) on-state characteristics
V EQUATION
TM
VTM = A + Bln (IT) + C.IT+D.√IT
4000
3500
Tj = 125˚C
3000
2500
2000
1500
1000
500
0
3
0.6
0.8
1.0
1.2
1.4
1.6
1.8
Instantaneous on-state voltage, VT - (V)
Fig.3 Maximum (limit) on-state characteristics
Where
A = 0.02866651
B = 0.1590393
C = 1.947584x10–4
D = –5.23298x10–3
these values are valid for Tj = 125˚C for IT 500A to 10000A
5/10
www.dynexsemi.com
Share Link: 