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DCR1595SW37 Ver la hoja de datos (PDF) - Dynex Semiconductor

Número de pieza
componentes Descripción
Fabricante
DCR1595SW37
Dynex
Dynex Semiconductor Dynex
DCR1595SW37 Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
DCR1595SW
SURGE RATINGS
Symbol
Parameter
IRRM/IRRM
dV/dt
Peak reverse and off-state current
Max. linear rate of rise of off-state voltage
dI/dt
Rate of rise of on-state current
VT(TO)
rT
t
gd
Threshold voltage
On-state slope resistance
Delay time
t
Turn-off time
q
IL
Latching current
I
Holding current
H
Test Conditions
Min. Max. Units
At VRRM/VDRM, Tcase = 125˚C
-
To 67% V , T = 125˚C, gate open
-
DRM j
From 67% VDRM to 2x IT(AV) Repetitive 50Hz
-
Gate source 30V, 10, Non-repetitive
-
400 mA
1000 V/µs
200 A/µs
400 A/µs
tr < 0.5µs, Tj = 125˚C
At T = 125˚C
vj
-
V
At Tvj = 125˚C
-
1.03 m
VD = 67% VDRM, gate source 30V, 15
0.5 0.19 µs
tr = 0.5µs, Tj = 25˚C
2
I = 5000A, t = 3.5ms, T =125˚C,
T
p
j
550 1000 µs
VR = 900V, dIRR/dt = 4A/µs,
VDR = 67% VDRM,
dV /dt
DR
=
20V/µs
linear
Tj = 25˚C, VD = 5V
220 1000 mA
Tj = 25˚C, RG–K = , ITM = 500A, IT = 5A
50
250 mA
4/10
www.dynexsemi.com

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