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Fabricante

CY7C1049BV33

512K x 8 Static RAM

Cypress Semiconductor 

CY7C1049BV33

Maximum Ratings

(Above which the useful life may be impaired. For user guide-

lines, not tested.)

Storage Temperature ................................. –65°C to +150°C

Ambient Temperature with

Power Applied............................................. –55°C to +125°C

Supply Voltage on VCC to Relative GND[2].....–0.5V to +4.6V

DC Voltage Applied to Outputs[2]

in High Z State .......................................–0.5V to VCC + 0.5V

DC Input Voltage[2] ................................ –0.5V to VCC + 0.5V

Current into Outputs (LOW) ........................................ 20 mA

Operating Range

Range

Commercial

Industrial

Ambient

Temperature

0°C to +70°C

–40°C to +85°C

VCC

3.3V ± 0.3V

DC Electrical Characteristics Over the Operating Range

Parame-

ter

Description

VOH

Output HIGH Voltage

VOL

Output LOW Voltage

VIH

Input HIGH Voltage

Test Conditions

VCC = Min.,

IOH = –4.0 mA

VCC = Min.,

IOL = 8.0 mA

VIL

Input LOW Voltage[2]

IIX

Input Load Current GND < VI < VCC

IOZ

Output Leakage

GND < VOUT < VCC,

Current

Output Disabled

ICC

VCC Operating

VCC = Max.,

Comm’l

Supply Current

f = fMAX = 1/tRC

Ind’l

ISB1

Automatic CE

Max. VCC, CE > VIH

Power-Down Current VIN > VIH or

—TTL Inputs

VIN < VIL, f = fMAX

ISB2

Automatic CE

Max. VCC,

Com’l/Ind’l

Power-Down Current CE > VCC – 0.3V,

—CMOS Inputs

VIN > VCC – 0.3V,

Com’l L

or VIN < 0.3V, f = 0

Note:

2. VIL (min.) = –2.0V for pulse durations of less than 20 ns.

-12

Min. Max.

2.4

0.4

2.2

VCC

+ 0.5

–0.5 0.8

–1

+1

–1

+1

200

220

30

8

0.5

-15

Min. Max.

2.4

0.4

2.2 VCC

+ 0.5

–0.5 0.8

–1

+1

–1

+1

180

200

30

8

0.5

-17

Min. Max. Unit

2.4

V

0.4 V

2.2 VCC V

+ 0.5

–0.5 0.8 V

–1

+1 µA

–1

+1 µA

170 mA

180 mA

30 mA

8 mA

0.5 mA

Document #: 38-05139 Rev. *A

Page 2 of 10

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