CXK5V81000ATM Ver la hoja de datos (PDF) - Sony Semiconductor

Número de pieza

componentes Descripción

Fabricante

CXK5V81000ATM

131072-word × 8-bit High Speed CMOS Static RAM

Sony Semiconductor 

CXK5V81000ATM

Electrical Characteristics

• DC Characteristics

Item

Input leakage current

Output leakage current

Operating power supply

current

Average operating current

Standby current

Output high voltage

Output low voltage

∗ VCC = 3.3V, Ta = 25°C

(VCC = 3.3V ± 0.3V, GND = 0V, Ta = –25 to +85°C)

Symbol

Test conditions

Min. Typ.∗ Max. Unit

ILI

VIN = GND to VCC

–1

—

+1 µA

CE1 = VIH or CE2 = VIL or

ILO

OE = VIH or WE = VIL

VI/O = GND to VCC

–1

—

+1 µA

CE1 = VIL, CE2 = VIH

ICC1

VIN = VIH or VIL

IOUT = 0mA

Min. cycle

ICC2

duty = 100%

IOUT = 0mA

85LLX

10LLX

Cycle time 1µs

duty = 100%

IOUT = 0mA

ICC3

CE1 ≤ 0.2V

CE2 ≥ Vcc – 0.2V

VIL ≤ 0.2V

VIH ≥ Vcc – 0.2V

—

1

3 mA

—

30

40

mA

—

25

35

—

5

10 mA

CE2 ≤ 0.2V

–25 to +85°C —

—

28

ISB1

{or

CE1 ≥ Vcc – 0.2V –25 to +70°C

CE2 ≥ Vcc – 0.2V +25°C

—

—

—

0.48

14 µA

—

ISB2

CE1 = VIH or CE2 = VIL

VOH

IOH = –2.0mA

— 0.12 1.4 mA

2.4

—

—V

VOL

IOL = 2.0mA

—

—

0.4 V

–3–

Share Link: