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CS5211ED14 Ver la hoja de datos (PDF) - ON Semiconductor

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componentes Descripción
Fabricante
CS5211ED14
ONSEMI
ON Semiconductor ONSEMI
CS5211ED14 Datasheet PDF : 13 Pages
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CS5211
ELECTRICAL CHARACTERISTICS (40°C < TA < 85°C; 40°C < TJ < 125°C; 4.5 V < VCC, VC < 14 V; 7.0 V < BST < 20 V;
CGATE(H) = CGATE(L) = 3.3 nF; ROSC = 51 k; CCOMP = 0.1 mF, unless otherwise specified.) (Note 3)
Characteristic
Test Conditions
Min
Typ Max Unit
General Electrical Specifications
VCC Supply Current
BST/VC Supply Current
Start Threshold
COMP = 0 V (no switching)
COMP = 0 V (no switching)
GATE(H) Switching, COMP Charging
5.0
8.0 mA
2.0
3.0 mA
3.90
4.05 4.20
V
Stop Threshold
GATE(H) Not Switching, COMP Not Charging
3.75
3.90 4.05
V
Hysteresis
StartStop
100
150
200
mV
Sense Ground Current
(Note 4)
0.15 1.00 mA
3. Guaranteed by design. Not tested in production.
4. Recommended maximum operating voltage between the three grounds is 200 mV.
VFFB
0.5 V
Σ
PWM Comparator
Reset Dominant
R
Q
COMP
VFB
SGND
VCC
IS+
IS
LGND
Error Amp
+
1.0 V
ART Ramp
OSC
ROSC
Fault
S
Q
PWM FF
0.8 V
VSTART
100 % DC
Comparator
+
UVLO
Comparator
UVLO
Set Dominant
Fault
S
Q
60 mV
OC
Comparator
0.25 V +
RQ
5.0 mA
COMP Discharge COMP
Figure 2. Block Diagram
BST
GATE(H)
VC
GATE(L)
PGND
ROSC
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