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BZX79-C2V4 Ver la hoja de datos (PDF) - General Semiconductor

Número de pieza
componentes Descripción
Fabricante
BZX79-C2V4
GE
General Semiconductor GE
BZX79-C2V4 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
BZX79 SERIES
SILICON PLANAR ZENER DIODES
DO-35
FEATURES
max. .079 (2.0)
Cathode
Mark
max. .020 (0.52)
Dimensions in inches and (millimeters)
The Zener voltages are graded according to the international
E 24 standard. Higher Zener voltages and 1% tolerance
available on request.
Diodes available in these tolerance series:
±2% BZX79-B
±3% BZX79-F
±5% BZX79-C
MECHANICAL DATA
Case: DO-35 Glass Case
Weight: approx. 0.13 g
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature 8unless otherwise specified
Zener Current (see Table “Characteristics”)
Power Dissipation at Tamb = 25°C
Junction Temperature
Storage Temperature Range
Continuous Forward Current
Peak reverse power dissipation (non-repetitive) tp=100ms,
square wave
SYMBOL
Ptot
Tj
TS
IF
PZSM
VALUE
500(1)
-65 to 200
-65 to + 200
250
40
UNIT
mW
°C
°C
mA
Watts
Characteristics at Tamb = 25°C
Thermal Resistance
Junction to Ambient Air
Forward Voltage
at IF = 10 mA
SYMBOL
RthJA
VF
MIN.
TYP.
MAX.
UNIT
0.3(1)
°C/W
0.9
Volts
NOTES:
(1) Valid provided that leads are kept at ambient temperature at a distance of 8mm from case.
12/10/98

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