BYV95A Ver la hoja de datos (PDF) - Philips Electronics
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BYV95A Datasheet PDF : 8 Pages
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Philips Semiconductors
Fast soft-recovery
controlled avalanche rectifiers
Product specification
BYV95 series
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VF
V(BR)R
IR
trr
Cd
-d-d--I--tR--
forward voltage
reverse avalanche
breakdown voltage
BYV95A
BYV95B
BYV95C
reverse current
reverse recovery time
diode capacitance
maximum slope of
reverse recovery current
IF = 3 A; Tj = Tj max; see Fig. 8
IF = 3 A; see Fig. 8
IR = 0.1 mA
VR = VRRMmax;
see Fig. 9
VR = VRRMmax; Tj = 165 °C;
see Fig. 9
when switched from IF = 0.5 A
to IR = 1 A; measured at
IR = 0.25 A; see Fig. 12
f = 1 MHz; VR = 0 V; see Fig. 10
when switched from IF = 1 A to
VR ≥ 30 V and dIF/dt = −1 A/µs;
see Fig.13
MIN.
−
−
300
500
700
−
−
−
−
−
TYP.
−
−
MAX.
1.35
1.60
UNIT
V
V
−
−
V
−
−
V
−
−
V
−
1 µA
−
150 µA
−
250 ns
45
−
pF
−
7 A/µs
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE UNIT
Rth j-tp
Rth j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
lead length = 10 mm 46
K/W
note 1
100
K/W
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.11.
For more information please refer to the “General Part of associated Handbook”.
1996 Jun 07
3
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