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BSS123LT1 Datasheet PDF : 4 Pages
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BSS123LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Ciss
—
20
—
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Coss
—
9.0
—
pF
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
SWITCHING CHARACTERISTICS(4)
Crss
—
4.0
—
pF
Turn–On Delay Time
Turn–Off Delay Time
(VCC = 30 Vdc, IC = 0.28 Adc,
td(on)
—
20
—
ns
VGS = 10 Vdc, RGS = 50 Ω)
td(off)
—
40
—
ns
REVERSE DIODE
Diode Forward On–Voltage
(ID = 0.34 Adc, VGS = 0 Vdc)
v v 4. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
VSD
—
—
1.3
V
2.0
1.8 TA = 25°C
1.6
1.4
VGS = 10 V
9V
1.2
8V
1.0
7V
0.8
0.6
6V
0.4
5V
0.2
4V
3V
0
0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10
VDS, DRAN SOURCE VOLTAGE (VOLTS)
Figure 1. Ohmic Region
1.0
VDS = 10 V
0.8
0.6
0.4
0.2
– 55°C
25°C
125°C
0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10
VGS, GATE SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
2.4
2.2
2.0 VGS = 10 V
ID = 200 mA
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
– 60
– 20
+ 20
+ 60
T, TEMPERATURE (°C)
+ 100
+ 140
Figure 3. Temperature versus Static
Drain–Source On–Resistance
1.2
1.05
1.1
1.10
1.0
0.95
0.9
0.85
0.8
0.75
0.7
– 60
VDS = VGS
ID = 1.0 mA
– 20
+ 20
+ 60
+ 100
+ 140
T, TEMPERATURE (°C)
Figure 4. Temperature versus Gate
Threshold Voltage
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
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