Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits
English
한국어
日本語
русский
简体中文
español
Número de pieza
componentes Descripción
C67070-A2515-A67 Ver la hoja de datos (PDF) - Siemens AG
Número de pieza
componentes Descripción
Fabricante
C67070-A2515-A67
IGBT Power Module
Siemens AG
C67070-A2515-A67 Datasheet PDF : 9 Pages
1
2
3
4
5
6
7
8
9
BSM50GD60DN2E3226
Forward characteristics of fast recovery
reverse diode
I
F
= f(V
F
)
parameter:
T
j
100
A
I
F
80
70
60
50
40
T
j
=125°C
T
j
=25°C
30
20
10
0
0.0 0.5 1.0 1.5 2.0
V
3.0
V
F
Transient thermal impedance
Z
th JC
=
ƒ
(
t
p
)
parameter:
D = t
p
/
T
Diode
10
1
K/W
Z
thJC
10
0
10
-1
10
-2
single pulse
D = 0.50
0.20
0.10
0.05
0.02
0.01
10
-3
10
-5
10
-4
10
-3
10
-2
10
-1
t
p
s 10
0
Semiconductor Group
8
Jan-10-1997
Share Link:
datasheetq.com [
Privacy Policy
]
[
Request Datasheet
] [
Contact Us
]