BSM50GD60DN2E3226
Typ. output characteristics
IC = f (VCE)
parameter: tp = 80 µs, Tj = 25 °C
100
A
17V
IC
80
15V
13V
11V
70
9V
7V
60
50
40
30
20
10
0
0
1
2
3
V
5
VCE
Typ. transfer characteristics
IC = f (VGE)
parameter: tp = 80 µs, VCE = 20 V
100
A
IC
80
70
60
50
40
30
20
10
0
0
2
4
6
8 10 V 14
VGE
Typ. output characteristics
IC = f (VCE)
parameter: tp = 80 µs, Tj = 125 °C
100
A
17V
IC
80
15V
13V
11V
70
9V
7V
60
50
40
30
20
10
0
0
1
2
3
V
5
VCE
Semiconductor Group
5
Jan-10-1997