BPW76 Ver la hoja de datos (PDF) - Vishay Semiconductors
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BPW76 Datasheet PDF : 5 Pages
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BPW76A, BPW76B
Vishay Semiconductors
Silicon NPN Phototransistor, RoHS Compliant
94 8401
DESCRIPTION
BPW76 is a silicon NPN phototransistor with high radiant
sensitivity in hermetically sealed TO-18 package with base
terminal and flat glass window. It is sensitive to visible and
near infrared radiation.
FEATURES
• Package type: leaded
• Package form: TO-18
• Dimensions (in mm): Ø 4.7
• High photo sensitivity
• High radiant sensitivity
• Suitable for visible and near infrared radiation
• Fast response times
• Angle of half sensitivity: ϕ = ± 40°
• Base terminal connected
• Hermetically sealed package
• Flat glass window
• Lead (Pb)-free component in accordance with
RoHS 2002/95/EC and WEEE 2002/96/EC
APPLICATIONS
• Detector in electronic control and drive circuits
PRODUCT SUMMARY
COMPONENT
BPW76A
Ica (mA)
0.4 to 0.8
BPW76B
> 0.6
Note
Test condition see table “Basic Characteristics”
ϕ (deg)
± 40
± 40
ORDERING INFORMATION
ORDERING CODE
BPW76A
BPW76B
Note
MOQ: minimum order quantity
PACKAGING
Bulk
Bulk
REMARKS
MOQ: 1000 pcs, 1000 pcs/bulk
MOQ: 1000 pcs, 1000 pcs/bulk
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITION
Collector base voltage
Collector emitter voltage
Emitter base voltage
Collector current
Collector peak current
Total power dissipation
Junction temperature
tp/T = 0.5, tp ≤ 10 ms
Tamb ≤ 25 °C
Operating temperature range
Storage temperature range
Soldering temperature
t≤5s
Thermal resistance junction/ambient
Connected with Cu wire, 0.14 mm2
Thermal resistance junction/case
Note
Tamb = 25 °C, unless otherwise specified
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
PV
Tj
Tamb
Tstg
Tsd
RthJA
RthJC
λ0.1 (nm)
450 to 1080
450 to 1080
PACKAGE FORM
TO-18
TO-18
VALUE
80
70
5
50
100
250
125
- 40 to + 125
- 40 to + 125
260
400
150
UNIT
V
V
V
mA
mA
mW
°C
°C
°C
°C
K/W
K/W
www.vishay.com
398
For technical questions, contact: detectortechsupport@vishay.com
Document Number: 81526
Rev. 1.4, 08-Sep-08
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