BFE505 Ver la hoja de datos (PDF) - Philips Electronics
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BFE505 Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN wideband differential transistor
Product specification
BFE505
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
DC characteristics of any single transistor
V(BR)CBO collector-base breakdown voltage IC = 2.5 µA; IE = 0
20
V(BR)CEO collector-emitter breakdown voltage IC = 10 µA; IB = 0
8
V(BR)EBO emitter-base breakdown voltage IE = 2.5 µA; IC = 0
2.5
ICBO
collector-base leakage current
IE = 0; VCB = 6 V
−
hFE
DC current gain
IC = 5 mA; VCE = 6 V
60
DC characteristics of the dual transistor
∆hFE
∆VBEO
ratio of highest and lowest DC
current gain
difference between highest and
lowest base-emitter voltage
(offset voltage)
IC1 = IC2 = 5 mA;
1
VCE1 = VCE2 = 6 V
IE1 = IE2 = 10 mA; Tamb = 25 °C 0
−
−
V
−
−
V
−
−
V
−
50
nA
120 250
1.2 −
1
−
mV
AC characteristics of any single transistor
fT
Cc
Cre
MSG/Gmax
transition frequency
collector capacitance
feedback capacitance
maximum power gain; note 1
s21 2
F
insertion power gain
noise figure
IC = 5 mA; VCE = 3 V; f = 1 GHz −
IE = ie = 0; VCB = 3 V; f = 1 MHz −
IC = 0; VCB = 3 V; f = 1 MHz
−
IC = 5 mA; VCE = 3 V;
−
f = 900 MHz; Tamb = 25 °C
IC = 5 mA; VCE = 3 V;
−
f = 2 GHz; Tamb = 25 °C
IC = 5 mA; VCE = 3 V;
−
f = 900 MHz; Tamb = 25 °C
IC = 2 mA; VCE = 3 V;
−
f = 900 MHz; ΓS = Γopt
IC = 3 mA; VCE = 3 V;
−
f = 2 GHz; ΓS = Γopt
9
−
0.3 −
0.25 −
17
−
10
−
13
−
1.2 1.7
1.9 2.1
GHz
pF
pF
dB
dB
dB
dB
dB
Note
1. Maximum gain of the differential amplifier is higher because of internal emitter connection (see Fig.2).
1996 Oct 08
4
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