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BC858CDW1T1

Dual General Purpose Transistors

Leshan Radio Company,Ltd 

LESHAN RADIO COMPANY, LTD.

BC856BDW1T1, BC857BDW1T1, BC857CDW1T1, BC858BDW1T1, BC858CDW1T1

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(I C = –10 mA)

BC856 Series

BC857 Series

V (BR)CEO

V

–65

—

—

–45

—

—

BC858 Series

–30

—

—

Collector–Emitter Breakdown Voltage

(I C = –10 µA, V EB = 0)

BC856 Series

BC857 Series

V (BR)CES

V

–80

—

—

–50

—

—

BC858 Series

–30

—

—

Collector–Base Breakdown Voltage

(I C = –10 µA)

BC856 Series

BC857 Series

V (BR)CBO

V

–80

—

—

–50

—

—

BC858 Series

–30

—

—

Emitter–Base Breakdown Voltage

(I E = –1.0 µA)

BC856 Series

BC857 Series

V (BR)EBO

V

–5.0

—

—

–5.0

—

—

BC858 Series

–5.0

—

—

Collector Cutoff Current

(V CB = –30 V)

I CBO

(V CB = –30 V, T A = 150°C)

—

—

–15

nA

—

—

–4.0

µA

ON CHARACTERISTICS

DC Current Gain

h FE

(I C = –10 µA, V CE = –5.0 V) BC856B, BC857B, BC858B

BC857C, BC858C

—

—

150

—

—

270

—

(I C = –2.0 mA, V CE =– 5.0 V) BC856B, BC857B, BC858B

BC857C, BC858C

Collector–Emitter Saturation Voltage (I C = -10 mA, I B = -0.5 mA) V CE(sat)

Collector–Emitter Saturation Voltage ( I C = -100 mA, I B = -5.0 mA)

Base–Emitter Saturation Voltage (I C = –10 mA, I B = –0.5 mA) V BE(sat)

Base–Emitter Saturation Voltage (I C = –100 mA, I B = –5.0 mA)

Base–Emitter Voltage (I C = –2.0 mA, V CE = –5.0 V)

V BE(on)

Base–Emitter Voltage (I C = –10 mA, V CE = –5.0 V)

SMALL–SIGNAL CHARACTERISTICS

Current–Gain — Bandwidth Product

(I C = –10 mA, V CE = –5.0 Vdc, f = 100 MHz)

Output Capacitance (V CB = –10 V, f = 1.0 MHz)

Noise Figure (I C = –0.2 mA,

V CE = –5.0 V dc, R S = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz)

fT

C obo

NF

220

290

475

420

520

800

—

—

–0.3

V

—

—

–0.65

—

–0.7

—

V

—

–0.9

—

–0.6

––

–0.75

V

—

—

–0.82

100

—

—

MHz

—

—

4.5

pF

dB

—

—

10

BC856b–2/5

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