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BAS19LT3G(2007) Ver la hoja de datos (PDF) - ON Semiconductor

Número de pieza
componentes Descripción
Fabricante
BAS19LT3G
(Rev.:2007)
ONSEMI
ON Semiconductor ONSEMI
BAS19LT3G Datasheet PDF : 6 Pages
1 2 3 4 5 6
BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1
820 W
+10 V
2.0 k
100 mH IF
0.1 mF
50 W OUTPUT
PULSE
GENERATOR
D.U.T.
0.1 mF
tr
tp
t
10%
50 W INPUT
SAMPLING
VR
OSCILLOSCOPE
90%
INPUT SIGNAL
IF
trr
t
IR(REC) = 3.0 mA
IR
OUTPUT PULSE
(IF = IR = 30 mA; MEASURED
at IR(REC) = 3.0 mA)
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 30 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 30 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
1200
1000
800
600
400
200
1
1
TA = 55°C
25°C
150°C
10
100
FORWARD CURRENT (mA)
Figure 2. Forward Voltage
1000
7000
6000
5000
4000
3000
6
5
4
3
2
1
0
1
TA = 150°C
TA = 25°C
TA = 55°C
2
5 10 20
50 100 200 300
REVERSE VOLTAGE (V)
Figure 3. Reverse Leakage
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