BA892V-02V-GS08 Ver la hoja de datos (PDF) - Vishay Semiconductors
Número de pieza
componentes Descripción
Fabricante
BA892V-02V-GS08 Datasheet PDF : 4 Pages
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BA892V-02V
Vishay Semiconductors
VISHAY
Parameter
Reverse current
Forward voltage
Diode capacitance
Forward resistance
Charge carrier life time
Test condition
Sub type Symbol Min
Typ.
Max
Unit
VR = 20 V
IR
20
nA
IF = 100 mA
VF
1.1
V
f = 1 MHz, VR = 0
CD
1.1
pF
f = 1 MHz, VR = 1 V
CD
0.9
1.2
pF
f = 1 MHz, VR = 3 V
CD
0.82
1.1
pF
f = 100 MHz, IF = 1 mA
rf
0.7
Ω
f = 100 MHz, IF = 3 mA
rf
0.5
0.7
Ω
f = 100 MHz, IF = 10 mA
rf
0.38
0.5
Ω
IF = 10 mA, IR = 6 mA, iR = 3 mA
trr
100
ns
Characteristics (Tamb = 25°C unless otherwise specified)
10.0
f = 100 MHz
1.0
0.1
0.10
16862
1.00
10.00
IF – Forward Current ( mA )
Figure 1. Forward Resistance vs. Forward Current
1.2
1.0
f = 1 MHz
0.8
0.6
0.4
0.2
0.0
0
16859
5 10 15 20 25 30
VR – Reverse Voltage (V)
Figure 2. Diode Capacitance vs. Reverse Voltage
Document Number 85640
Rev. 1, 26-Sep-02
www.vishay.com
2
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