AT29BV010A-12TU Ver la hoja de datos (PDF) - Atmel Corporation

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AT29BV010A-12TU

1-Megabit (128K x 8) Single 2.7-volt Battery-Voltage Flash Memory

Atmel Corporation 

Features

• Single Supply Voltage, Range 2.7V to 3.6V

• Single Supply for Read and Write

• Software Protected Programming

• Fast Read Access Time – 120 ns

• Low Power Dissipation

– 15 mA Active Current

– 50 µA CMOS Standby Current

• Sector Program Operation

– Single Cycle Reprogram (Erase and Program)

– 1024 Sectors (128 Bytes/Sector)

– Internal Address and Data Latches for 128 Bytes

• Two 8K Bytes Boot Blocks with Lockout

• Fast Sector Program Cycle Time – 20 ms Max

• Internal Program Control and Timer

• DATA Polling for End of Program Detection

• Typical Endurance > 10,000 Cycles

• CMOS and TTL Compatible Inputs and Outputs

• Green (Pb/Halide-free) Packaging Option

1. Description

The AT29BV010A is a 2.7-volt only in-system Flash Programmable and Erasable

Read Only Memory (Flash). Its 1 megabit of memory is organized as 131,072 words

by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS EEPROM technol-

ogy, the device offers access times to 120 ns, and a low 54 mW power dissipation.

When the device is deselected, the CMOS standby current is less than 50 µA. The

device endurance is such that any sector can typically be written to in excess of

10,000 times. The programming algorithm is compatible with other devices in Atmel’s

Low Voltage Flash family of products.

To allow for simple in-system reprogrammability, the AT29BV010A does not require

high input voltages for programming. The device can be operated with a single 2.7V to

3.6V supply. Reading data out of the device is similar to reading from an EPROM.

Reprogramming the AT29BV010A is performed on a sector basis; 128 bytes of data

are loaded into the device and then simultaneously programmed.

During a reprogram cycle, the address locations and 128 bytes of data are captured at

microprocessor speed and internally latched, freeing the address and data bus for

other operations. Following the initiation of a program cycle, the device will automati-

cally erase the sector and then program the latched data using an internal control

timer. The end of a program cycle can be detected by DATA polling of I/O7. Once the

end of a program cycle has been detected, a new access for a read or program can

begin.

1-Megabit

(128K x 8)

Single 2.7-volt

Battery-Voltage

Flash Memory

AT29BV010A

0519F–FLASH–9/08

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