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Número de pieza
componentes Descripción
DGT409BCA6565 Ver la hoja de datos (PDF) - Dynex Semiconductor
Número de pieza
componentes Descripción
Fabricante
DGT409BCA6565
Reverse Blocking Gate Turn-off Thyristor
Dynex Semiconductor
DGT409BCA6565 Datasheet PDF : 11 Pages
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SEMICONDUCTOR
DGT409BCA
30
3.0
28
2.8
26
2.6
24
2.4
22
2.2
20
t
gf
2.0
18
1.8
16
1.6
14
1.4
12
1.2
10
1.0
8
t
gs
0.8
6
Conditions:
0.6
4 T
j
= 115° C, C
S
= 2µF,
0.4
2
R
S
= 10Ω, I
T
= 800A,
V
DM
= 3000V
0.2
0
0
0 10 20 30 40 50 60 70 80
Rate of rise of reverse gate current, dI
GQ
/dt - (A/µs)
0.1
0.01
0.001
0.0001
0.001 0.01
0.1
1
Time - (s)
dc
10
100
Fig.18 Gate storage time and fall time vs rate of rise of
reverse gate current
Fig.19 Maximum (limit) transient thermal impedance –
double side cooled
9/11
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