DGT409BCA6565 Ver la hoja de datos (PDF) - Dynex Semiconductor
Número de pieza
componentes Descripción
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DGT409BCA6565 Datasheet PDF : 11 Pages
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SEMICONDUCTOR
DGT409BCA
2500
Conditions:
2300
Tc = 100° C,
VR = 3500V
2100
1900
IT = 300A
1700
1500
IT = 150A
1300
1100
900
700
500
0 20 40 60 80 100 120 140 160 180 200
Rate of fall of anode current, dI/dt - (A/µs)
Fig.10 Maximum reverse recovery power vs rate of fall
of anode current
6000
Conditions:
5500 Tj = 115° C, IFG = 20A,
CS = 2µF, RS = 20Ω,
5000 dIT/dt = 150A/µs,
dIFG/dt = 30A/µs
4500
VD = 4500V
VD = 3000V
4000
3500
3000
2500
VD = 1500V
2000
1500
1000
500
0
0 100 200 300 400 500 600 700 800
On-state current, IT - (A)
Fig.11Turn-on energy vs on-state current
4000
3500 VD = 4500V
3000
2500 VD = 3000V
2000
1500
VD = 1500V
1000 Conditions:
Tj = 115° C, IT = 400A,
500 CS = 2µF, RS = 20Ω,
dIT/dt = 150A/µs,
dIFG/dt = 30A/µs
0
0
10
20
30
40
50
60
Peak forward gate current, IFGM - (A)
Fig.12 Turn-on energy vs peak forward gate current
8
7
tr
6
5
4
3
td
2 Conditions:
Tj = 115° C, IFG = 20A,
1 CS = 2µF, RS = 10Ω,
VD = 3000V, dIT/dt = 150A/µs
dIFG/dt = 30A/µs
0
0 100 200 300 400 500 600 700
On-state current, IT - (A)
Fig.13 Delay time and rise time vs on-state current
7/11
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