DGT409BCA6565 Ver la hoja de datos (PDF) - Dynex Semiconductor
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Fabricante
DGT409BCA6565 Datasheet PDF : 11 Pages
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SEMICONDUCTOR
DGT409BCA
1.5
Conditions:
1.4 Tj = 115° C,
1.3 VDM = 4300V,
1.2 dIGQ/dt = 20A/µs
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Snubber capacitance, CS - (µF)
Fig.6 Maximum dependence of ITCM on CS
7.0
Conditions:
6.5 Tc = 100° C,
6.0 VR = 3500V
5.5
IT = 300A
5.0
4.5
4.0
IT = 150A
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0 20 40 60 80 100 120 140 160 180 200
Rate of fall of anode current, dI/dt - (A/µs)
Fig.7 Maximum reverse recovery energy vs rate of fall of
anode current
4000
Conditions:
3800
Tc = 100° C,
VR = 3500V
3600
3400
IT = 300A
800
Conditions:
750
Tc = 100° C,
VR = 3500V
700
650
IT = 300A
3200
600
3000
550
IT = 150A
2800
500
2600
450
2400
IT = 150A
400
2200
350
2000
0 20 40 60 80 100 120 140 160 180 200
Rate of fall of anode current, dI/dt - (A/µs)
Fig.8 Maximum reverse recovery charge vs rate of fall
of anode current
300
0 20 40 60 80 100 120 140 160 180 200
Rate of fall of anode current, dI/dt - (A/µs)
Fig.9 Maximum reverse recovery current vs rate of fall of
anode current
6/11
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