DGT409BCA Ver la hoja de datos (PDF) - Dynex Semiconductor
Número de pieza
componentes Descripción
Fabricante
DGT409BCA Datasheet PDF : 11 Pages
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SEMICONDUCTOR
CURVES
IT
DGT409BCA
QS
VR
IRR
15µs
Fig.3 Reverse recovery waveforms
2.0
4.0
1.8
IGT
3.6
1.6
3.2
1.4
2.8
1.2
2.4
1.0
2.0
0.8
1.4
VGT
0.6
1.2
0.4
0.8
0.2
0.4
0
-50 -25
0
0 25 50 75 100 125 150
Junction temperature, Tj - (° C)
Fig.4 Maximum gate trigger voltage/current vs junction
temperature
1000
900
800
700
Tj = 25° C
600
500
Tj = 115° C
400
300
200
100
0
01 2 3 4 5 6 78
Instantaneous on-state voltage, VT - (V)
Fig.5 Maximum on-state characteristics
5/11
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